| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,800 pcs
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10800 pcs | On Request | 1 | On Request | On Request | 0644+ | On Request | On Request |
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The TLE2027IDR from Texas Instruments is a precision operational amplifier designed for applications requiring a balance of low noise and high speed. It features a typical gain bandwidth product of 13 MHz and a low input voltage noise density of 2.5 nV/√Hz at 1 kHz, making it suitable for sensitive analog circuits.
This amplifier boasts excellent DC precision with a maximum offset voltage of 0.1 mV at 25°C and a low offset drift of 0.4 µV/°C. The input bias current is specified at a maximum of 90000 pA. The device operates over a wide supply voltage range from 8 V to 38 V and supports a typical quiescent current of 3.8 mA per channel.
Packaged in an 8-pin SOIC (D) surface-mount package with dimensions of 4.9 mm x 6 mm, the TLE2027IDR is designed for general-purpose operational amplifier applications where high precision and low noise are critical. Its output swing headroom is 1.5 V to the negative supply and -1.8 V to the positive supply, with a typical output current of 0.035 A.
The TLE2027IDR operates with a total supply voltage from 8 V minimum to 38 V maximum.
The TLE2027IDR has a typical gain bandwidth product of 13 MHz and a typical unity-gain bandwidth of 15 MHz.
The TLE2027IDR has a maximum offset voltage of 0.1 mV at 25°C, with a typical offset drift of 0.4 µV/°C.
The TLE2027IDR has a typical input voltage noise density of 2.5 nV/√Hz at 1 kHz and 3.3 nV/√Hz at 10 Hz.
The TLE2027IDR operates over a temperature range of 0°C to 70°C.
The TLE2027IDR is available in an SOIC (D) package with dimensions of 4.9 mm × 6 mm and a package area of 29.4 mm².
No, the TLE2027IDR is not a rail-to-rail amplifier. It has 2 V input common mode headroom to the negative supply and -2 V to the positive supply.