| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK9A65W,S5X is a silicon N-Channel MOSFET utilizing the DTMOS Super Junction Structure. It is designed for applications such as switching voltage regulators.
Key electrical characteristics include a drain-source voltage of 650V, a continuous drain current of 9.3A, and a low typical drain-source on-resistance of 0.43Ω. The gate threshold voltage (Vth) ranges from 2.5V to 3.5V. The device features easy gate switching control and operates in enhancement mode.
Absolute maximum ratings specify a drain-source voltage of 650V and a continuous drain current of 9.3A. The maximum channel temperature is 150°C, and storage temperature ranges from -55°C to 150°C. The isolation voltage is rated at 2000V RMS.
Packaged in a TO-220SIS package, this MOSFET is suitable for through-hole mounting. The start of commercial production was in September 2014.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 650 V.
The continuous drain current is 9.3 A.
The maximum on-resistance is 500 mOhm at 4.6 A and 10 V.
The maximum gate charge is 20 nC at 10 V.
The storage temperature range is -55 to 150 °C, and the channel temperature is 150 °C.
It is available in a TO-220-3 Full Pack (TO-220SIS) through-hole package.
The power dissipation is 30 W at a case temperature of 25 °C.