| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
345 pcs
|
345 pcs | On Request | 1 | On Request | On Request | 1018+ | On Request | On Request |
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| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| Technology | |
| Vgs(th) (Max) @ Id |
This TK9A45D MOSFET from Toshiba Semiconductor and Storage is an N-Channel device utilizing Metal Oxide Semiconductor technology. It features a high Drain to Source Voltage (Vdss) of 450V and can handle a continuous Drain Current (Id) of 9A at 25°C. The device has a maximum On-Resistance (Rds On) of 770mOhm at 4.5A and 10V gate drive voltage. The Gate Threshold Voltage (Vgs(th)) is a maximum of 4V at 1mA.
With a maximum power dissipation of 40W (Tc) and an operating temperature range of up to 150°C (TJ), this MOSFET is suitable for various power applications. It is packaged in a TO-220SIS through-hole package, with a standard package quantity of 50 units in a tube.
The TK9A45D belongs to the π-MOSVII series and is RoHS3 compliant. Its robust specifications make it a reliable choice for power switching and control circuits.
The Drain to Source Voltage (Vdss) is 450V.
The continuous drain current (Id) at 25°C is 9A.
The maximum On-Resistance (Rds On) is 770mOhm at 4.5A and 10V.
The operating temperature range is up to 150°C (TJ).
The TK9A45D is supplied in a TO-220SIS package.
The TK9A45D is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 (Unlimited).