| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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44,316 pcs
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44316 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Toshiba TK8S06K3L is an N-channel MOSFET belonging to the U-MOSVI series, designed for demanding applications such as automotive systems, motor drivers, DC-DC converters, and switching voltage regulators.
This component is AEC-Q101 qualified, ensuring reliability for automotive use. Key electrical characteristics include a low drain-source on-resistance of 43 mΩ (typical) at VGS = 10 V and a low leakage current of 10 µA (maximum) at VDS = 60 V. The gate threshold voltage ranges from 2.0 to 3.0 V.
Absolute maximum ratings specify a drain-source voltage of 60 V, a continuous drain current of 8 A, and a pulsed drain current of 16 A. The power dissipation is rated at 25 W at 25°C (Tc). The device operates within a channel temperature range of -55°C to 175°C.
The TK8S06K3L is packaged in a DPAK+ surface-mount package. Its internal circuit consists of Gate, Drain (heatsink), and Source connections.
The drain-source voltage rating for the TK8S06K3L is 60 V.
The typical drain-source on-resistance of the TK8S06K3L is 43 mΩ at VGS = 10 V.
The maximum continuous drain current for the TK8S06K3L is 8 A.
The TK8S06K3L is available in a DPAK+ package.
Yes, the TK8S06K3L is AEC-Q101 qualified.