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TK8P65W,RQ The Toshiba TK8P65W,RQ is an N-Channel MOSFET designed for switching applications. It features a 650V drain-source voltage and a 7.8A continuous drain current.
Mfr Part #:

TK8P65W,RQ

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK8P65W,RQ is an N-Channel MOSFET designed for switching applications. It features a 650V drain-source voltage and a 7.8A continuous drain current.
✓ Total Stock: 2,400 pcs
$ Price Range: $2.56

TK8P65W,RQ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,400 pcs
On Request
2400 pcs On Request 1 On Request On Request 14+PBF On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TK8P65W,RQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TK8P65W,RQ Description

Short technical summary and product information.

The Toshiba TK8P65W,RQ is an N-Channel Power MOSFET utilizing DTMOSIV technology. It is designed for applications such as switching voltage regulators.

 

Key electrical characteristics include a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 7.8A at 25°C. The device offers a low drain-source on-resistance (Rds On) of 670mOhm at 3.9A and 10V, with a typical value of 0.55 Ohm. The gate threshold voltage (Vgs(th)) ranges from 2.5V to 3.5V.

 

This MOSFET has a maximum power dissipation of 80W (Tc) and operates within a channel temperature range of -55°C to 150°C. It is packaged in a DPAK surface-mount package.

 

Additional features include a gate charge (Qg) of 16nC at 10V, input capacitance (Ciss) of 570pF at 300V, and fast switching times with typical rise and fall times of 20ns and 4ns respectively.

TK8P65W,RQ Quick Information

Product Type: MOSFET
Series: TK8P65W
Canonical Name: TK8P65W,RQ N-Channel MOSFET
Subcategory: N-Channel

TK8P65W,RQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK8P65W,RQ Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK8P65W,RQ Features

  • 650V Drain-Source Voltage (Vds)
  • 7.8A Continuous Drain Current (Id)
  • 80W Maximum Power Dissipation (Pd)
  • N-Channel MOSFET
  • DPAK Surface Mount Package

TK8P65W,RQ Applications

  • Used in high-voltage DC-DC converters.
  • Suitable for AC-DC power supply designs.
  • Ideal for power factor correction circuits.
  • Applied in motor control and inverter systems.

TK8P65W,RQ FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the TK8P65W,RQ?

The maximum drain-source voltage (Vds) for the TK8P65W,RQ is 650V.

What is the continuous drain current of the TK8P65W,RQ?

The continuous drain current (Id) for the TK8P65W,RQ is 7.8A at 25°C.

What is the maximum power dissipation for the TK8P65W,RQ?

The maximum power dissipation (Pd) for the TK8P65W,RQ is 80W when measured at the case temperature (Tc).

What is the operating temperature range for the TK8P65W,RQ?

The operating temperature range for the TK8P65W,RQ is -55°C to 150°C.

What type of MOSFET is the TK8P65W,RQ?

The TK8P65W,RQ is an N-Channel MOSFET.

What package is the TK8P65W,RQ supplied in?

The TK8P65W,RQ is supplied in a DPAK package.

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