| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40,000 pcs
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40000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Toshiba TK8P60W5 TK8P60W is a high-performance N-Channel Power MOSFET suitable for applications such as switching voltage regulators and motor drivers. This device features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 8.0A, with a power dissipation (Pd) of 80W.
It is constructed with Toshiba's DTMOS IV technology, ensuring efficient operation. The MOSFET has a typical gate threshold voltage (Vgs(th)) of 4.5V, a typical static drain-source on-resistance (Rds(on)) of 560mΩ, and typical input capacitance (Ciss) of 590pF. The gate charge (Qg) is typically 22nC.
The TK8P60W5 TK8P60W comes in a SOT-252 surface-mount package, making it suitable for compact PCB designs. Its robust specifications make it a reliable choice for power management circuits requiring efficient switching and high current handling capabilities.
The maximum drain-source voltage (Vds) for the TK8P60W5 TK8P60W is 600V.
The continuous drain current (Id) for the TK8P60W5 TK8P60W is 8.0A.
The power dissipation (Pd) for the TK8P60W5 TK8P60W is 80W.
The TK8P60W5 TK8P60W is available in a SOT-252 package.
The typical gate threshold voltage (Vgs(th)) is 4.5V.
The typical static drain-source on-resistance (Rds(on)) is 560mΩ.
The TK8P60W5 TK8P60W is designed for switching voltage regulators and motor drivers.