| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,612 pcs
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8612 pcs | On Request | 1 | On Request | On Request | 1353+ | On Request | On Request | |
|
2,686 pcs
|
2686 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TK8P25DA is a Silicon N-Channel MOSFET manufactured by Toshiba. This component is housed in a DPAK package, suitable for surface-mount applications.
Key electrical characteristics include a maximum Drain-Source Voltage of 250V and a typical Drain-Source Resistance of 500mΩ. The device can handle a maximum power dissipation of 55W and operates at temperatures up to 150°C.
This MOSFET is designed for use in power switching and amplification circuits. Its specifications make it suitable for applications requiring moderate voltage and current handling capabilities within a compact package.
The maximum Drain-Source Voltage is 250V.
The typical Drain-Source Resistance is 500mΩ.
The maximum power dissipation is 55W.
The maximum operating temperature is 150°C.
The TK8P25DA MOSFET is in a DPAK package.