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5,747 pcs
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5747 pcs | On Request | 1 | On Request | On Request | 0906+ | On Request | On Request |
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The Toshiba TK8B50D is a specialized N-Channel MOSFET operating in enhancement mode. It is constructed with a silicon element and designed for switching applications.
Key electrical specifications include a minimum breakdown voltage of 500V and a maximum continuous drain current of 8A, with a pulsed drain current capability of 32A. The maximum on-resistance is rated at 0.85 Ω. It also features an avalanche energy rating of 165 mJ.
This component is housed in a flange mount package, specifically the SC-67 code, with through-hole termination. It has 3 terminals and is configured as a single element with a built-in diode.
The TK8B50D is manufactured by Toshiba America Electronic Components and is classified under discrete semiconductors as a specialized transistor.
The TK8B50D is housed in an SC-67 flange mount package with through-hole terminals and 3 pins.
The maximum continuous drain current is 8A, and the pulsed drain current is 32A.
The maximum drain-source on-resistance is 0.85Ω.
The minimum drain-source breakdown voltage is 500V.
The avalanche energy rating is 165mJ.
Yes, the configuration is single with a built-in diode.
It is an N-channel enhancement mode MOSFET.