| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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| Technology |
The TK8A50DA(STA4,Q,M) from Toshiba Semiconductor and Storage is an N-Channel MOSFET designed for power applications. It features a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 7.5A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 1.04 Ohms at 3.8A and 10V gate drive, a gate threshold voltage (Vgs(th)) of 4.4V maximum at 1mA, and a gate charge (Qg) of 16nC maximum at 10V. Input capacitance (Ciss) is rated at 700pF maximum at 25V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 35W (Tc). It is housed in a TO-220SIS package and utilizes through-hole mounting.
The device is described as RoHS 3 Compliant and has a Moisture Sensitivity Level (MSL) of 1.
The maximum drain-to-source voltage (Vdss) is 500V.
The continuous drain current (Id) at 25°C is 7.5A.
The maximum on-resistance (Rds On) is 1.04 Ohms at 3.8A and 10V.
The operating temperature (TJ) is up to 150°C.
It is supplied in a TO-220SIS package.
It is mounted using the through-hole method.
Yes, it is Lead free / RoHS Compliant.