| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,264 pcs
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2264 pcs | On Request | 1 | On Request | On Request | 1411+ | On Request | On Request |
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| Manufacturer Name |
The Toshiba TK8A50D(STA4,Q,M is a single N-Channel MOSFET from the Tk8a50d series. It features a drain-source breakdown voltage (Vds) of 500V and a continuous drain current (Id) of 8A.
Key electrical characteristics include a drain-source resistance (Rds On) of 850 mOhms and a gate-source threshold voltage (Vgs th) of 2V. The device operates with a gate-source voltage (Vgs) of 10V and has a maximum operating temperature of 150°C. Power dissipation is rated at 40W.
This MOSFET is constructed using Silicon (Si) technology and has an enhancement channel mode. It is packaged in an SC-67-3 case and designed for through-hole mounting. The component has a factory pack quantity of 2500 units.
Additional specifications include a gate charge (Qg) of 16 nC, a minimum forward transconductance of 1S, a fall time of 12 ns, and a rise time of 20 ns. Typical turn-on delay time is 40 ns, and typical turn-off delay time is 60 ns.
The drain-source breakdown voltage is 500V.
The continuous drain current is 8A.
The drain-source resistance is 850 mOhms.
The gate-source threshold voltage is 2V.
The maximum operating temperature is 150°C.
This is an N-Channel MOSFET with enhancement channel mode.
The MOSFET is in an SC-67-3 package and is designed for through-hole mounting.