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310 pcs
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310 pcs | On Request | 1 | On Request | On Request | 1439+ | On Request | On Request |
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The Toshiba TK8A50D(STA4 is a unipolar N-channel MOSFET transistor designed for various electronic applications. It features a maximum drain-source voltage of 500V and a continuous drain current of 8A, with a pulsed drain current capability of up to 32A. The transistor has a power dissipation rating of 40W.
This MOSFET is housed in a TO220FP package, suitable for through-hole mounting (THT). The gate-source voltage is rated at ±30V, and the on-state resistance is 0.85Ω. These specifications make it a suitable component for power switching and amplification circuits where high voltage and moderate current handling are required.
Key electrical characteristics include a 500V drain-source voltage and 8A continuous drain current. The TO220FP package facilitates easy integration into circuit designs using THT mounting methods. The device operates with a gate-source voltage range of ±30V, ensuring reliable switching performance.
The drain-source voltage is 500V.
The continuous drain current is 8A.
The pulsed drain current is 32A.
The power dissipation is 40W.
The on-state resistance is 0.85Ω.
The TK8A50D(STA4 is supplied in a TO220FP package.
The TK8A50D(STA4 is mounted using THT.