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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | 1017+ | On Request | On Request |
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The Toshiba TK8A10K3 is a high-performance N-channel MOS field-effect transistor designed for demanding switching regulator applications. It features a low drain-source ON resistance of 90 mΩ (typ.) and a low leakage current of 10 µA (max) at 100 V.
This transistor boasts a drain-source breakdown voltage of 100 V and a continuous drain current rating of 8 A. The gate threshold voltage ranges from 2.0 V to 4.0 V. With a power dissipation of 18 W at 25°C case temperature, it is suitable for various power management tasks.
The TK8A10K3 comes in a SC-67 package, weighing approximately 1.7 g. Its thermal resistance from channel to case is 6.94 °C/W, and from channel to ambient is 62.5 °C/W, allowing for efficient heat dissipation under load.
Key electrical characteristics include a gate-source voltage range of ±20 V and a maximum channel temperature of 150°C. The device is designed with U-MOSᶚ technology for enhanced performance.
The maximum drain-source voltage is 100V.
The maximum continuous drain current is 8A.
The maximum channel temperature is 150°C.
The TK8A10K3 is available in an SC-67 package.
The typical drain-source on-resistance is 90mΩ at VGS = 10V and ID = 4A.
The gate threshold voltage ranges from 2.0V to 4.0V at VDS = 10V and ID = 1.0mA.