TK8A10K3 The Toshiba TK8A10K3 is a silicon N-channel MOS type field effect transistor designed for switching regulator applications. It offers low drain-source ON resistance and low leakage current.
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TK8A10K3

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK8A10K3 is a silicon N-channel MOS type field effect transistor designed for switching regulator applications. It offers low drain-source ON resistance and low leakage current.
✓ Total Stock: 60 pcs

TK8A10K3 Available from 1 distributor

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TK8A10K3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TK8A10K3 Description

Short technical summary and product information.

The Toshiba TK8A10K3 is a high-performance N-channel MOS field-effect transistor designed for demanding switching regulator applications. It features a low drain-source ON resistance of 90 mΩ (typ.) and a low leakage current of 10 µA (max) at 100 V.

 

This transistor boasts a drain-source breakdown voltage of 100 V and a continuous drain current rating of 8 A. The gate threshold voltage ranges from 2.0 V to 4.0 V. With a power dissipation of 18 W at 25°C case temperature, it is suitable for various power management tasks.

 

The TK8A10K3 comes in a SC-67 package, weighing approximately 1.7 g. Its thermal resistance from channel to case is 6.94 °C/W, and from channel to ambient is 62.5 °C/W, allowing for efficient heat dissipation under load.

 

Key electrical characteristics include a gate-source voltage range of ±20 V and a maximum channel temperature of 150°C. The device is designed with U-MOSᶚ technology for enhanced performance.

TK8A10K3 Quick Information

Product Type: Field Effect Transistor
Series: TK
Canonical Name: TK8A10K3 Silicon N-Channel MOS Type Field Effect Transistor
Subcategory: N-Channel

TK8A10K3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK8A10K3 Features

  • Low drain-source ON resistance.
  • Low leakage current.
  • 100 V drain-source breakdown voltage.
  • 8 A continuous drain current.
  • SC-67 package.

TK8A10K3 Applications

  • Power management and DC-DC converter circuits.
  • Motor control and drive applications.
  • Load switching and power distribution systems.
  • General purpose switching and amplification.

TK8A10K3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the TK8A10K3?

The maximum drain-source voltage is 100V.

What is the continuous drain current rating of the TK8A10K3?

The maximum continuous drain current is 8A.

What is the operating temperature range of the TK8A10K3?

The maximum channel temperature is 150°C.

What package does the TK8A10K3 come in?

The TK8A10K3 is available in an SC-67 package.

What is the typical on-resistance of the TK8A10K3?

The typical drain-source on-resistance is 90mΩ at VGS = 10V and ID = 4A.

What is the gate threshold voltage of the TK8A10K3?

The gate threshold voltage ranges from 2.0V to 4.0V at VDS = 10V and ID = 1.0mA.

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