| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Toshiba, part number TK80S06K3L(T6L1,NQ, is suitable for various power switching applications. It offers a maximum drain-to-source voltage of 60V and can handle a continuous drain current of up to 80A under specific conditions.
The device exhibits a low on-resistance of 5.5mOhm at 40A and 10V Vgs, with a gate threshold voltage of 3V at 1mA. Its input capacitance is rated at 4200pF at 10V, and the gate charge is 85nC at 10V Vgs. The MOSFET operates at temperatures up to 175°C (TJ).
Packaged in a surface-mount TO-252-3, DPak (2 Leads + Tab), SC-63 (DPAK+), this component is designed for efficient thermal management. The maximum power dissipation is 100W when measured at the case temperature (Tc).
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status. These attributes are derived from existing database information and should be verified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V
TO-252-3 (DPAK) surface mount package.
175°C
5.5 mOhm maximum at Id = 40A, Vgs = 10V.
85 nC maximum at Vgs = 10V.
4200 pF maximum at Vds = 10V.
3V maximum at Id = 1mA.