BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
84 pcs
|
84 pcs | On Request | 1 | On Request | On Request | 1128+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TK80E08K3(S1 is a Silicon N-Channel MOSFET belonging to the U MOS family. It is engineered for applications requiring efficient power switching, such as E-bikes, Uninterruptible Power Supplies (UPS), and inverters.
Key electrical characteristics include a low drain-source ON resistance of 7.5 mΩ (typical) and a high forward transfer admittance of 135 S (typical). The device also exhibits a low leakage current with an IDSS of 10 A (maximum) at 75 V. The gate threshold voltage (Vth) ranges from 2.0 V to 4.0 V under specific test conditions (VDS = 10 V, ID = 1 mA).
This MOSFET is an enhancement-mode device, offering good performance for switching regulator applications. Its design focuses on achieving high efficiency and reliability in demanding power electronic systems. The part number TK80E08K3(S1 indicates specific packaging and electrical variants from Toshiba.
7.5 mOhm at VGS=10V, ID=10A.
135 S typical.
2.0 to 4.0 V at VDS=10V, ID=1mA.
Surface Mount.
10 A at VDS=75V.