| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60,000 pcs
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60000 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| SVHC Present |
The Toshiba TK80A08K3 is a Silicon N Channel MOS Type (U-MOS) field-effect transistor. It is designed for switching regulator applications and features a low drain-source ON-resistance of 3.6 mOhm (typical) and high forward transfer admittance of 200 S (typical).
This MOSFET has a drain-source voltage rating of 75V and a continuous drain current of up to 80A. The threshold voltage ranges from 2.0 to 4.0V. It is housed in an SC-67 package.
Key electrical characteristics include a maximum gate-source voltage of 20V and a low leakage current of 10A (max) at 75V drain-source voltage. The power dissipation is rated at 40W.
This component is suitable for various power electronics applications requiring efficient switching and low conduction losses.
75 V.
SC-67 with 3 pins.
80 A.
3.6 mOhm at Vgs=10V.
2.0 to 4.0 V at Vds=10V, ID=1mA.
40 W.
200 S at Vds=75V.