| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,969 pcs
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6969 pcs | On Request | 1 | On Request | On Request | 1616+PB | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package |
The TK7P65W from Toshiba is an N-Channel MOSFET suitable for various power switching applications. This component boasts a drain-to-source voltage (Vds) of 40V and can handle a continuous drain current (Id) of up to 420A at 25°C. Its on-resistance (Rds On) is a maximum of 0.56mΩ at 64A and 10V gate drive, indicating efficient power handling.
The MOSFET operates within a temperature range of -55°C to 150°C. It features a maximum gate voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The input capacitance (Ciss) is 26.11nF at 20V, and the gate charge (Qg) is a maximum of 338nC at 10V.
Packaged in an 8-PowerVDFN (8-Dual Cool™88) surface mount package, the TK7P65W is designed for efficient thermal management. Its high power dissipation capability of 156W (Tc) makes it suitable for demanding applications. The component is specified with a Moisture Sensitivity Level (MSL) of 1.
The drain-to-source voltage (Vds) for the TK7P65W MOSFET is 40V.
The maximum continuous drain current (Id) for the TK7P65W is 420A at 25°C.
The on-resistance (Rds On) of the TK7P65W MOSFET is a maximum of 0.56mΩ at 64A and 10V.
The operating temperature range for the TK7P65W is -55°C to 150°C.
The TK7P65W MOSFET is supplied in an 8-PowerVDFN package.
The Moisture Sensitivity Level (MSL) for the TK7P65W is 1 (Unlimited).