| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,925 pcs
|
4925 pcs | On Request | 1 | On Request | On Request | 16 | On Request | On Request |
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The Toshiba TK7P60W5,RVQ is an N-Channel MOSFET belonging to the DTMOS family, utilizing a Super Junction Structure. It is designed for applications such as switching voltage regulators and motor drivers.
Key electrical characteristics include a drain-source breakdown voltage of 600V and a maximum continuous drain current of 7A. The on-resistance (Rds On) is specified at a maximum of 670mOhm at 3.5A and 10V gate-source voltage. The gate-source threshold voltage ranges from 3V to 4.5V. It also features a fast reverse recovery time of 75 ns (typ.).
This MOSFET is housed in a TO-252-3, DPak package suitable for surface mounting. It operates within a channel temperature range of -55°C to 150°C and has a maximum power dissipation of 60W (Tc). The device is designed for easy gate switching control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the TK7P60W5,RVQ is 600 V.
The continuous drain current (Id) rating is 7 A.
The maximum drain-source on-resistance (Rds On) is 670mOhm at 3.5A and 10V.
The operating temperature range (channel temperature) is -55°C to 150°C.
The TK7P60W5,RVQ is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
This MOSFET is suitable for switching voltage regulators and motor drivers.
The typical reverse recovery time (trr) is 75 ns.