| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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32,800 pcs
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32800 pcs | On Request | 1 | On Request | On Request | 11+PBF | On Request | On Request | |
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1,879 pcs
|
1879 pcs | On Request | 1 | On Request | On Request | 2014+ | On Request | On Request |
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The Toshiba TK7P50D is a silicon N-Channel MOS Field Effect Transistor, part of the π-MOSⅦ series, specifically designed for switching regulator applications. It offers a low drain-source ON-resistance of 1.0 Ω (typ.) and a high forward transfer admittance of 2.5 S (typ.).
Key electrical characteristics include a drain-source breakdown voltage of 500 V and a gate threshold voltage ranging from 2.4 to 4.4 V. The device also exhibits a low leakage current of 10 μA (max) at 500 V.
With a channel temperature rating of 150 °C and a thermal resistance of 1.25 °C/W (channel to case), the TK7P50D is suitable for demanding applications. It comes in a 2-7K1A package, designed for surface mounting.
This MOSFET is an electrostatic sensitive device and requires careful handling.
500 V.
Continuous drain current is 7 A; pulse current (1 ms) is 28 A.
Typical 1.0 Ω, maximum 1.22 Ω at VGS = 10 V and ID = 3.5 A.
2-7K1A surface mount package (0.36 g typical).
100 W at case temperature 25°C.
150°C; storage temperature range is −55 to 150°C.