| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | 1042+ | On Request | On Request |
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The Toshiba TK7A50D(STA4,Q,M) is a high-performance N-channel MOSFET. It features a drain-source breakdown voltage of 500V and a continuous drain current of 7A, making it suitable for various power switching applications.
Key electrical characteristics include a low drain-source on-resistance of 1 Ohm and a gate-source threshold voltage of 4.4V. The MOSFET operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 35W.
This component is housed in a TO-220-3 FP package and supports through-hole mounting. Its fast switching times, with a fall time of 8ns and a rise time of 18ns, contribute to efficient operation in demanding circuits. The gate charge is rated at 12nC, and it has a gate-source voltage rating of 30V.
500V.
-55°C to +150°C.
TO-220-3 FP.
12 nC.
7 A.
35 W.
Through hole.