| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,500 pcs
|
9500 pcs | On Request | 1 | On Request | On Request | 11PB | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Height | |
| Input Capacitance | |
| Lead Style | |
| Length | |
| Mounting Style | |
| Number of Channels | |
| Package / Case | |
| Power Dissipation | |
| SVHC Present | |
| Technology | |
| Transistor Type | |
| Turn Off Time | |
| Turn On Time | |
| Width |
The Toshiba TK7A50D is a silicon N-Channel MOS Field Effect Transistor, part of the π-MOSⅦ series, specifically designed for switching regulator applications. It features a low drain-source ON-resistance of 1.0 Ω (typ.) and a high forward transfer admittance of 2.5 S (typ.).
Key electrical characteristics include a drain-source breakdown voltage of 500V and a continuous drain current of 7A. The gate threshold voltage ranges from 2.4V to 4.4V. Switching characteristics are also notable, with rise and fall times of 18ns and 8ns respectively, and turn-on and turn-off times of 40ns and 55ns.
This MOSFET is housed in a TO-220-3 FP package, suitable for through-hole mounting. It has a power dissipation rating of 35W at 25°C case temperature and operates within a channel temperature range of -55°C to 150°C. The device is sensitive to static electricity and should be handled with care.
Applications include switching power supplies and general-purpose power switching.
The minimum drain-source breakdown voltage is 500V.
The continuous drain current is 7A.
The typical drain-source on-resistance is 1 Ohm.
The TK7A50D is available in a TO-220-3 FP package.
The maximum channel temperature is 150°C.
The gate threshold voltage ranges from 2.4V to 4.4V.
The typical total gate charge is 12 nC.