| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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699 pcs
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699 pcs | On Request | 1 | On Request | On Request | 1204+ | On Request | On Request |
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The Toshiba TK75J04K3Z(STA1 is a high-performance N-Channel MOSFET belonging to the U-MOS IV generation. It is engineered for demanding applications such as motor drives and switching regulators.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 75A. The device offers a low maximum on-resistance (RDS(ON)) of 3mΩ at 10V gate-source voltage, ensuring efficient power transfer. Its gate threshold voltage (Vth) is a maximum of 4V, and it has a typical input capacitance (Ciss) of 8450pF and a typical gate charge (Qg) of 190nC at 10V.
This MOSFET is housed in a TO-3P(N) package, suitable for through-hole mounting. The bulk packaging is designed for industrial use. The internal connection is single, and it is specified as N-channel polarity.
While RoHS3 compliant, the specific verification status for RoHS, MSL, and REACH should be confirmed.
The maximum drain-source voltage is 40V.
The continuous drain current is 75A.
The package type is TO-3P(N).
The maximum on-resistance is 3mΩ at a gate-source voltage of 10V.
It is suitable for motor drive and switching regulator applications.
The RoHS status is RoHS3 Compliant.