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TK70J04J3(Q) The Toshiba TK70J04J3(Q) is an N-Channel Power Field-Effect Transistor designed for applications like motor drives. It offers a low drain-source on-resistance and high forward transfer admittance.
Mfr Part #:

TK70J04J3(Q)

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK70J04J3(Q) is an N-Channel Power Field-Effect Transistor designed for applications like motor drives. It offers a low drain-source on-resistance and high forward transfer admittance.
✓ Total Stock: 250 pcs

TK70J04J3(Q) Available from 1 distributor

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Optech Co.,Limited ✓
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250 pcs
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250 pcs On Request 1 On Request On Request 1141+ On Request On Request
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TK70J04J3(Q) Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TK70J04J3(Q) Description

Short technical summary and product information.

The Toshiba TK70J04J3(Q) is a silicon N-channel MOS type (U MOS III) power field-effect transistor. It is designed for motor drive applications and features a low drain-source on-resistance of 3.0 mΩ (typ.) and high forward transfer admittance of 120 S (typ.).

 

Key electrical characteristics include a low leakage current of 10 µA (max) at 40 V and an enhancement mode gate threshold voltage between 1.5 V and 3.0 V. The continuous drain current is rated at 70 A (typ.) at 25°C.

 

This MOSFET is suitable for various switching applications, including voltage regulators and DC-DC converters, in addition to motor drivers. Its specifications make it a robust component for power management circuits.

TK70J04J3(Q) Quick Information

Product Type: Power Field-Effect Transistor
Series: TK70J04J3
Canonical Name: Toshiba TK70J04J3(Q) N-Channel Power Field-Effect Transistor
Subcategory: N-Channel

TK70J04J3(Q) Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK70J04J3(Q) Features

  • Low drain-source on-resistance: 3.0 mΩ typical.
  • High forward transfer admittance: 120 S typical.
  • Low leakage current: 10 µA maximum.
  • Suitable for motor drive applications.
  • N-Channel, enhancement mode MOSFET.

TK70J04J3(Q) Applications

  • Used in motor drive applications.
  • Suitable for switching voltage regulators.
  • Ideal for DC-DC converters.

TK70J04J3(Q) FAQs

5 frequently asked questions generated from this part’s specifications.
What is the typical drain-source on-resistance for the TK70J04J3(Q)?

The typical drain-source on-resistance is 3.0 mΩ.

What is the typical forward transconductance of the TK70J04J3(Q)?

The typical forward transconductance is 120 S.

What is the maximum leakage current for the TK70J04J3(Q) at 40V?

The maximum leakage current is 10 µA.

What is the gate threshold voltage range for the TK70J04J3(Q)?

The gate threshold voltage is between 1.5 V and 3.0 V.

What are the primary applications for the TK70J04J3(Q) MOSFET?

The TK70J04J3(Q) is designed for motor drive applications and is also suitable for switching voltage regulators and DC-DC converters.

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