TK70A06J1 The Toshiba TK70A06J1 is an N-Channel Power MOSFET designed for switching regulator applications. It offers a 60V drain-source voltage and 70A continuous drain current.
Mfr Part #:

TK70A06J1

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK70A06J1 is an N-Channel Power MOSFET designed for switching regulator applications. It offers a 60V drain-source voltage and 70A continuous drain current.
✓ Total Stock: 3,500 pcs

TK70A06J1 Available from 1 distributor

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3,500 pcs
3500 pcs On Request 1 On Request On Request 12+ On Request On Request

TK70A06J1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Mounting Type
Package / Case
SVHC Present

TK70A06J1 Description

Short technical summary and product information.

The Toshiba TK70A06J1 is a Silicon N-Channel MOS Type Field-Effect Transistor from the Ultra-High-Speed U-MOSⅢ series. It is designed for switching regulator applications and features high-speed switching capabilities.

 

Key electrical characteristics include a low drain-source ON resistance of 5.1 mΩ (typ.) at 35A and 60V VGS, a small gate charge of 87nC (typ.), and a high forward transfer admittance of 80 S (typ.). The device also exhibits a low leakage current of 10 μA (max) at 60V VDS. The enhancement-mode threshold voltage ranges from 1.1V to 2.3V.

 

This MOSFET is suitable for applications requiring efficient power switching. Its specifications make it a viable component for various power management circuits. The device is typically available in a surface-mount TO-263 package.

TK70A06J1 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: Toshiba TK70A06J1 N-Channel Power MOSFET
Subcategory: N-Channel

TK70A06J1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK70A06J1 Features

  • 60V drain-source voltage rating.
  • 70A continuous drain current.
  • 5.1 mOhm typical ON-resistance.
  • 87nC typical gate charge.
  • Ultra-High-Speed U-MOSⅢ technology.

TK70A06J1 Applications

  • Ideal for switching regulator circuits.
  • Suitable for high-speed power switching.
  • Used in power management applications.

TK70A06J1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the TK70A06J1?

60 V.

What is the package type of the TK70A06J1?

TO-263 surface mount package.

What is the typical on-resistance of the TK70A06J1?

5.1 mOhm at VGS=10V, ID=35A.

What is the gate charge of the TK70A06J1?

87 nC typical.

What is the forward transconductance of the TK70A06J1?

80 S typical.

What is the drain-source leakage current of the TK70A06J1?

10 uA maximum at VDS=60V.

What is the threshold voltage range of the TK70A06J1?

1.1V to 2.3V.

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