| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The Toshiba TK70A06J1 is a Silicon N-Channel MOS Type Field-Effect Transistor from the Ultra-High-Speed U-MOSⅢ series. It is designed for switching regulator applications and features high-speed switching capabilities.
Key electrical characteristics include a low drain-source ON resistance of 5.1 mΩ (typ.) at 35A and 60V VGS, a small gate charge of 87nC (typ.), and a high forward transfer admittance of 80 S (typ.). The device also exhibits a low leakage current of 10 μA (max) at 60V VDS. The enhancement-mode threshold voltage ranges from 1.1V to 2.3V.
This MOSFET is suitable for applications requiring efficient power switching. Its specifications make it a viable component for various power management circuits. The device is typically available in a surface-mount TO-263 package.
60 V.
TO-263 surface mount package.
5.1 mOhm at VGS=10V, ID=35A.
87 nC typical.
80 S typical.
10 uA maximum at VDS=60V.
1.1V to 2.3V.