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TK6Q65W,S1Q The Toshiba TK6Q65W,S1Q is an N-Channel MOSFET with a 650V drain-source voltage and 5.8A continuous drain current. It is supplied in an IPAK package.
Mfr Part #:

TK6Q65W,S1Q

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK6Q65W,S1Q is an N-Channel MOSFET with a 650V drain-source voltage and 5.8A continuous drain current. It is supplied in an IPAK package.
✓ Total Stock: 7,000 pcs
$ Price Range: $2.56

TK6Q65W,S1Q Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,000 pcs
On Request
7000 pcs On Request 1 On Request On Request 16+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TK6Q65W,S1Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TK6Q65W,S1Q Description

Short technical summary and product information.

The Toshiba TK6Q65W,S1Q is an N-Channel MOSFET designed for switching voltage regulator applications. It features a low drain-source on-resistance of 0.89 Ohms typical and a maximum Rds On of 1.05 Ohms at 2.9A and 10V.

 

Key electrical specifications include a 650V drain-source voltage, ±30V gate-source voltage, and 5.8A continuous drain current. The device has a gate threshold voltage of 3.5V and an input capacitance of 390pF.

 

This MOSFET is housed in an IPAK package, suitable for through-hole mounting. It has a maximum power dissipation of 60W and an operating temperature up to 150°C (TJ).

TK6Q65W,S1Q Quick Information

Product Type: MOSFET
Canonical Name: TK6Q65W,S1Q N-Channel MOSFET
Subcategory: N-Channel

TK6Q65W,S1Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK6Q65W,S1Q Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK6Q65W,S1Q Features

  • N-Channel MOSFET technology.
  • 650V drain-source voltage rating.
  • 5.8A continuous drain current.
  • 1.05 Ohm maximum Rds On.
  • IPAK package for through-hole mounting.

TK6Q65W,S1Q Applications

  • Used in switch mode power supplies.
  • Suitable for power factor correction circuits.
  • Ideal for lighting ballast applications.
  • Applicable in DC-DC converters.
  • Employed in motor control circuits.

TK6Q65W,S1Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the TK6Q65W,S1Q?

650V.

What is the continuous drain current rating?

5.8A.

What is the package type?

IPAK (TO-251-3) through-hole package.

What is the maximum operating temperature?

150°C junction temperature.

What is the typical on-resistance?

0.89Ω.

What is the gate threshold voltage range?

2.5V to 3.5V.

What is the avalanche energy capability?

82mJ.

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