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TK6P60V,RVQ The Toshiba TK6P60V,RVQ is a Silicon N-Channel MOS (DTMOS) MOSFET. It offers a 600V breakdown voltage and a typical drain-source on-resistance of 0.68 Ohms.
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TK6P60V,RVQ

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK6P60V,RVQ is a Silicon N-Channel MOS (DTMOS) MOSFET. It offers a 600V breakdown voltage and a typical drain-source on-resistance of 0.68 Ohms.
✓ Total Stock: 700 pcs

TK6P60V,RVQ Available from 1 distributor

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Optech Co.,Limited ✓
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700 pcs
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700 pcs On Request 1 On Request On Request 15+PBF On Request On Request
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TK6P60V,RVQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TK6P60V,RVQ Description

Short technical summary and product information.

The Toshiba TK6P60V,RVQ is a Silicon N-Channel MOS (DTMOS) MOSFET designed for switching voltage regulators.

 

Key electrical characteristics include a drain-source breakdown voltage of 600V. The typical drain-source on-resistance (RDS(ON)) is 0.68 Ohms, achieved using a Super Junction Structure. The gate threshold voltage (Vth) ranges from 2.7 to 3.7V under specific test conditions.

 

This MOSFET is easy to control for gate switching applications. Its enhancement mode operation makes it suitable for various power management designs.

 

Further details regarding package type, mounting, and specific application circuits can be found in the manufacturer's datasheet.

TK6P60V,RVQ Quick Information

Product Type: MOSFET
Series: TK6P60V
Canonical Name: Toshiba TK6P60V,RVQ Silicon N-Channel MOS (DTMOS) MOSFET
Subcategory: Silicon N-Channel

TK6P60V,RVQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK6P60V,RVQ Features

  • 600V drain-source breakdown voltage.
  • 0.68 Ohm typical drain-source on-resistance.
  • 2.7 to 3.7V gate threshold voltage.
  • Silicon N-Channel MOS (DTMOS) technology.
  • Suitable for switching voltage regulators.

TK6P60V,RVQ Applications

  • High-voltage switching circuits.
  • Power supply and conversion systems.
  • Motor control applications.
  • Inverter and converter topologies.

TK6P60V,RVQ FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 600V.

What is the typical drain-source on-resistance?

The typical drain-source on-resistance is 0.68 Ohms.

What is the gate threshold voltage range?

The gate threshold voltage is 2.7 to 3.7V.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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