| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK6A65W,S5X is a high-performance N-Channel MOSFET utilizing DTMOS technology for low drain-source on-resistance. It is rated for a maximum drain-source voltage of 650V and a continuous drain current of 5.8A.
Key electrical characteristics include a typical drain-source on-resistance of 0.85 Ohms and a gate threshold voltage ranging from 2.5V to 3.5V. The device is designed for easy gate switching control and operates with a drive voltage of 10V.
Packaged in a TO-220SIS configuration, this MOSFET is suitable for through-hole mounting. It has a maximum power dissipation of 30W (Tc) and a channel temperature rating of 150°C. The component is also rated for an isolation voltage of 2000V RMS.
Applications for the TK6A65W,S5X include switching voltage regulators. Its robust design and specifications make it a reliable choice for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The continuous drain current is 5.8A.
The typical drain-source on-resistance is 0.85 Ohms.
The TK6A65W,S5X is supplied in a TO-220SIS package.
The operating temperature range is -55°C to 150°C.
The TK6A65W,S5X is used in switching voltage regulators.