Mfr Part #:

TK6A65D

Mfr Name: Toshiba

The Toshiba TK6A65D is an N-Channel MOSFET designed for switching regulator applications. It features a 650V drain-source breakdown voltage and a 6A continuous drain current.

✓ Total Stock: 42,774 pcs

$ Price Range: $7.19

TK6A65D Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	26,888 pcs On Request	26888 pcs	On Request	1	On Request	On Request	17+	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	15,600 pcs On Request	15600 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	286 pcs On Request	286 pcs	On Request	1	On Request	On Request	15+	On Request	On Request

TK6A65D Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Input Capacitance	1050 pF
Mounting Style	Through Hole
Storage Temperature	°C ~ °C
Tape & Reel	No

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TK6A65D Description

Short technical summary and product information.

The Toshiba TK6A65D is a silicon N-Channel MOS Type Field Effect Transistor, part of the π-MOSⅦ series. It is specifically designed for switching regulator applications, offering a low drain-source ON resistance of 0.95 Ω (typ.) and high forward transfer admittance of 4.0 S (typ.).

Key electrical characteristics include a drain-source breakdown voltage of 650V and a continuous drain current of 6A. The gate threshold voltage ranges from 2.0V to 4.0V. The device also exhibits a low leakage current of 10 μA (max) at 650V.

With a maximum channel temperature of 150°C and a thermal resistance of 2.78 °C/W (channel to case), the TK6A65D is suitable for demanding applications. It is housed in a Through Hole package, specifically the SC-62-3, and is supplied in Tube packaging with a factory pack quantity of 50.

This MOSFET is an electrostatic sensitive device and requires careful handling. Its specifications make it a reliable component for power management circuits.

TK6A65D Quick Information

Product Type: MOSFET

Series: TK6A65D

Canonical Name: Toshiba TK6A65D N-Channel MOSFET

Subcategory: N-Channel MOSFET

TK6A65D Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TK6A65D Estimated Pricing

Qty	Low	High
1+	$7.19	$7.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK6A65D Features

650V drain-source breakdown voltage.
6A continuous drain current.
0.95 Ohm typical drain-source ON resistance.
4.0 S typical forward transfer admittance.
SC-62-3 Through Hole package.

TK6A65D Applications

Used in high-voltage power regulation circuits
Suitable for voltage stabilization in power supplies
Ideal for power management modules
Applied in high-voltage switching applications

TK6A65D FAQs

5 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the TK6A65D?

The drain-source breakdown voltage of the TK6A65D is 650 V.

What is the continuous drain current for the TK6A65D?

The continuous drain current for the TK6A65D is 6 A.

What is the typical ON resistance of the TK6A65D MOSFET?

The typical ON resistance (Rds(on)) of the TK6A65D MOSFET is 0.95 Ω at a gate-source voltage of 10V and a drain current of 3A.

What is the maximum channel temperature for the TK6A65D?

The maximum channel temperature for the TK6A65D is 150 °C.

What package type is the TK6A65D MOSFET supplied in?

The TK6A65D MOSFET is supplied in a Through Hole package, specifically the SC-62-3.