TK6A60DR The Toshiba TK6A60DR is a 600V, 6A N-Channel MOSFET in a TO-220 package. It offers low drain-source ON-resistance and is suitable for switching regulator applications.
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TK6A60DR

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK6A60DR is a 600V, 6A N-Channel MOSFET in a TO-220 package. It offers low drain-source ON-resistance and is suitable for switching regulator applications.
✓ Total Stock: 6,112 pcs

TK6A60DR Available from 1 distributor

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TK6A60DR Specifications Quick View

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TK6A60DR Description

Short technical summary and product information.

The Toshiba TK6A60DR is a silicon N-Channel MOS Type Field Effect Transistor designed for power switching applications. It features a maximum drain-source voltage (VDSS) of 600V and a continuous drain current (ID) of 6A.

 

Key electrical characteristics include a low typical drain-source ON-resistance (RDS(ON)) of 1.0 Ω and a high typical forward transfer admittance (|Yfs|) of 3.0 S. The device also exhibits a low maximum leakage current (IDSS) of 10 μA at 600V. The threshold voltage (Vth) ranges from 2.0 to 4.0V under specific test conditions.

 

Absolute maximum ratings include a gate-to-source voltage (VGSS) of ±30V, a drain peak current (ID(pulse)) of 24A, and a power dissipation (Pd) of 40W at 25°C.

 

This MOSFET is housed in a TO-220 package, making it suitable for various applications, including switching regulators. Its robust specifications make it a reliable component for power management circuits.

TK6A60DR Quick Information

Product Type: N-Channel MOSFET
Series: TK6A60DR
Canonical Name: Toshiba TK6A60DR N-Channel MOSFET
Subcategory: N-Channel

TK6A60DR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK6A60DR Features

  • 600V drain-source voltage rating.
  • 6A continuous drain current.
  • 1.0 Ω typical ON-resistance.
  • 3.0 S typical forward transfer admittance.
  • TO-220 package for power applications.

TK6A60DR Applications

  • Used in switching regulator circuits.
  • Suitable for power supply designs.
  • Ideal for DC-DC converter applications.
  • Used in high-voltage switching applications.

TK6A60DR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the TK6A60DR?

The maximum drain-source voltage (VDSS) for the TK6A60DR is 600V.

What is the continuous drain current of the TK6A60DR?

The continuous drain current (ID) for the TK6A60DR is 6A.

What is the typical ON-resistance of the TK6A60DR?

The typical drain-source ON-resistance (RDS(ON)) for the TK6A60DR is 1.0 Ω.

What package type is the TK6A60DR available in?

The TK6A60DR is available in a TO-220 package.

What is the typical forward transfer admittance of the TK6A60DR?

The typical forward transfer admittance (|Yfs|) for the TK6A60DR is 3.0 S.

What is the threshold voltage range for the TK6A60DR?

The threshold voltage (Vth) for the TK6A60DR ranges from 2.0 to 4.0V.

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