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6,112 pcs
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6112 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The Toshiba TK6A60DR is a silicon N-Channel MOS Type Field Effect Transistor designed for power switching applications. It features a maximum drain-source voltage (VDSS) of 600V and a continuous drain current (ID) of 6A.
Key electrical characteristics include a low typical drain-source ON-resistance (RDS(ON)) of 1.0 Ω and a high typical forward transfer admittance (|Yfs|) of 3.0 S. The device also exhibits a low maximum leakage current (IDSS) of 10 μA at 600V. The threshold voltage (Vth) ranges from 2.0 to 4.0V under specific test conditions.
Absolute maximum ratings include a gate-to-source voltage (VGSS) of ±30V, a drain peak current (ID(pulse)) of 24A, and a power dissipation (Pd) of 40W at 25°C.
This MOSFET is housed in a TO-220 package, making it suitable for various applications, including switching regulators. Its robust specifications make it a reliable component for power management circuits.
The maximum drain-source voltage (VDSS) for the TK6A60DR is 600V.
The continuous drain current (ID) for the TK6A60DR is 6A.
The typical drain-source ON-resistance (RDS(ON)) for the TK6A60DR is 1.0 Ω.
The TK6A60DR is available in a TO-220 package.
The typical forward transfer admittance (|Yfs|) for the TK6A60DR is 3.0 S.
The threshold voltage (Vth) for the TK6A60DR ranges from 2.0 to 4.0V.