| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,890 pcs
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3890 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The Toshiba TK6A60D(STA4,X,M) is a silicon N-channel MOS Field Effect Transistor. It is designed for switching regulator applications, offering a low drain-source ON-resistance of typically 1 Ohm and a high forward transfer admittance of typically 3 S. The device features a drain-source voltage rating of 600V and a maximum continuous drain current of 6A.
This MOSFET operates in enhancement mode with a threshold voltage typically between 2.0V and 4.0V. It has a maximum gate-source voltage rating of 30V and a power dissipation of 40W. The component is housed in an SC-67 package, also referred to as TO-220SIS.
Key electrical characteristics include a typical leakage current of 10A at 600V VDS. The low ON-resistance and high transconductance make it suitable for efficient power switching applications. The SC-67 package is designed for through-hole mounting.
The maximum drain-source voltage is 600V.
The typical on-resistance is 1 Ohm when the gate-source voltage is 10V.
The maximum continuous drain current is 6A.
The power dissipation is 40W.
It is supplied in an SC-67 package, also known as TO-220SIS.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.