| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,628 pcs
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9628 pcs | On Request | 1 | On Request | On Request | 1342+ | On Request | On Request | |
|
974 pcs
|
974 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The Toshiba TK6A60D is a silicon N-Channel MOS Type (π-MOSⅦ) Field Effect Transistor. It is specifically designed for switching regulator applications, offering a low drain-source ON-resistance of 1.0 Ω (typ.) and a high forward transfer admittance of 3.0 S (typ.).
Key electrical characteristics include a drain-source breakdown voltage of 600 V and a gate threshold voltage ranging from 2.0 to 4.0 V. The device can handle a continuous drain current of 6 A and a pulse drain current of 24 A, with a maximum power dissipation of 40 W at 25°C.
Packaged in an SC-67 through-hole mount, the TK6A60D has a channel temperature rating of 150°C and a storage temperature range of -55 to 150°C. Thermal resistance from channel to case is 3.125 °C/W, and from channel to ambient is 62.5 °C/W.
600V minimum.
SC-67 through-hole.
Channel temperature up to 150°C, storage from -55 to 150°C.
6A DC, 24A pulsed.
2.0 to 4.0V.
1.0Ω typical, 1.25Ω maximum at VGS=10V, ID=3A.
16 nC typical.