| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Technology | |
| Vgs(th) (Max) @ Id |
This TK6A50D(STA4,Q,M) from Toshiba is a single N-Channel MOSFET belonging to the π-MOSVII series. It offers a high drain-source voltage rating of 500V and a continuous drain current of 6A at 25°C.
The MOSFET features a maximum on-resistance of 1.4 Ohm at 3A and 10V gate drive voltage. The gate threshold voltage is a maximum of 4.4V at 1mA, and the maximum gate charge is 11 nC at 10V. The input capacitance is rated at a maximum of 540 pF at 25V.
With a maximum power dissipation of 35W (Tc) and an operating junction temperature of up to 150°C, this device is suitable for various power management applications. It is supplied in a TO-220SIS package and is designed for through-hole mounting.
The RoHS status is ROHS3 Compliant, and the Moisture Sensitivity Level is 1 (Unlimited).
500V maximum.
TO-220SIS through-hole package.
Up to 150°C junction temperature.
6A at 25°C case temperature.
1.4 Ohm maximum at 3A drain current and 10V gate drive.
11 nC maximum at 10V gate-source voltage.
540 pF maximum at 25V drain-source voltage.