| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
38,466 pcs
|
38466 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Toshiba, part number TK65A10N1S4X, is suitable for various power switching applications. It offers a maximum drain-source voltage (Vdss) of 100V and can handle a continuous drain current (Id) of up to 65A at the case temperature.
The device features a low on-resistance (Rds On) of 4.8mOhm at 32.5A and 10V gate drive voltage, contributing to efficient power transfer. The maximum gate-source voltage is ±20V, with a gate threshold voltage (Vgs(th)) of 4V at 1mA.
Packaged in a TO-220SIS configuration, this component is designed for through-hole mounting. It operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 45W (Tc). The input capacitance (Ciss) is 5400 pF at 50V, and the gate charge (Qg) is 81 nC at 10V.
This MOSFET utilizes Metal Oxide Semiconductor technology and is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
65A (Tc).
4.8mOhm at 32.5A, 10V.
TO-220-3 Full Pack (TO-220SIS) through-hole.
150°C.
81nC at 10V.
5400pF at 50V.