TK5Q60W,S1VQ The Toshiba TK5Q60W,S1VQ is an N-Channel MOSFET designed for power applications. It offers a 600V drain-source voltage and a continuous drain current of 5.4A.
Mfr Part #:

TK5Q60W,S1VQ

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK5Q60W,S1VQ is an N-Channel MOSFET designed for power applications. It offers a 600V drain-source voltage and a continuous drain current of 5.4A.
✓ Total Stock: 36 pcs
$ Price Range: $2.56

TK5Q60W,S1VQ Available from 1 distributor

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✓ Non-Authorised
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TK5Q60W,S1VQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TK5Q60W,S1VQ Description

Short technical summary and product information.

The Toshiba TK5Q60W,S1VQ is a single N-Channel MOSFET from Toshiba, designed for efficient power switching. It features a high drain-to-source voltage rating of 600V and can handle a continuous drain current of up to 5.4A under specific conditions.

 

This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology. Key electrical characteristics include a maximum on-resistance of 900mOhm at 2.7A and 10V, a gate threshold voltage of 3.7V, and a maximum gate-source voltage of ±30V. The input capacitance is rated at 380pF at 300V, with a gate charge of 10.5nC at 10V.

 

Packaged in a TO-251-3 IPAK configuration, the TK5Q60W,S1VQ is designed for through-hole mounting. It has a maximum power dissipation of 60W and an operating temperature range of up to 150°C (TJ). The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

 

Ideal for power management and energy conversion circuits, this MOSFET provides reliable performance for various electronic designs requiring high voltage and moderate current handling capabilities.

TK5Q60W,S1VQ Quick Information

Product Type: MOSFET
Canonical Name: Toshiba TK5Q60W,S1VQ N-Channel MOSFET
Subcategory: Power MOSFETs

TK5Q60W,S1VQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK5Q60W,S1VQ Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK5Q60W,S1VQ Features

  • 600V drain-to-source voltage rating.
  • 5.4A continuous drain current capability.
  • 900mOhm maximum on-resistance.
  • TO-251-3 IPAK package for through-hole mounting.
  • RoHS3 compliant with MSL 1.

TK5Q60W,S1VQ Applications

  • Suitable for power supply circuits.
  • Used in energy conversion systems.
  • Ideal for switching applications.
  • Applicable in industrial controls.

TK5Q60W,S1VQ FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the TK5Q60W,S1VQ?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current of the TK5Q60W,S1VQ?

The continuous drain current is 5.4A.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 900mOhm at a drain current of 2.7A and gate-source voltage of 10V.

What is the operating temperature range?

The operating temperature range is up to 150°C (TJ).

What package type is the TK5Q60W,S1VQ in?

It is in a TO-251-3 Stub Leads, IPAK package.

How is the TK5Q60W,S1VQ mounted?

It is designed for through-hole mounting.

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