TK5P60W,RVQ The Toshiba TK5P60W,RVQ is an N-Channel MOSFET with a 600V drain-source breakdown voltage and a continuous drain current of 5.4A. It is housed in a surface-mount DPAK package.
Mfr Part #:

TK5P60W,RVQ

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK5P60W,RVQ is an N-Channel MOSFET with a 600V drain-source breakdown voltage and a continuous drain current of 5.4A. It is housed in a surface-mount DPAK package.
✓ Total Stock: 3,000 pcs
$ Price Range: $2.56

TK5P60W,RVQ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 1409+ On Request On Request

TK5P60W,RVQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Height
Input Capacitance (Ciss) (Max) @ Vds
Length
Mounting Style
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Width

TK5P60W,RVQ Description

Short technical summary and product information.

The Toshiba TK5P60W,RVQ is an N-Channel MOSFET designed for power applications. It features a high drain-source breakdown voltage of 600V and can handle a continuous drain current of 5.4A. The on-resistance (Rds On) is a maximum of 900mOhm at a gate-source voltage of 10V and a drain current of 2.7A.

 

This MOSFET operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a gate charge (Qg) of 10.5 nC at 10V and a gate-source threshold voltage (Vgs th) between 2.7V and 3.7V at 270µA. The input capacitance (Ciss) is 380 pF at 300V.

 

Packaged in a surface-mount DPAK (TO-252-3) case, the TK5P60W,RVQ is suitable for various electronic designs. Its dimensions are 6.5mm in length, 5.5mm in width, and 2.3mm in height. The device has a power dissipation rating of 60W (Tc).

 

This component utilizes MOSFET technology and is part of the DTMOSIV series. It is designed for single-channel operation and offers typical rise and fall times of 18ns and 7ns, respectively, with turn-on and turn-off delay times of 40ns and 50ns.

TK5P60W,RVQ Quick Information

Product Type: MOSFET
Series: DTMOSIV
Canonical Name: Toshiba TK5P60W,RVQ N-Channel MOSFET
Subcategory: MOSFETs

TK5P60W,RVQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK5P60W,RVQ Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK5P60W,RVQ Features

  • 600V drain-source breakdown voltage.
  • 5.4A continuous drain current.
  • 900mOhm maximum Rds On.
  • Surface mount DPAK package.
  • Operating temperature from -55°C to +150°C.

TK5P60W,RVQ Applications

  • Suitable for power supply circuits.
  • Used in switching power applications.
  • Ideal for general purpose switching.
  • Applications requiring surface mounting.

TK5P60W,RVQ FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the TK5P60W,RVQ?

The drain-source breakdown voltage is 600V.

What is the continuous drain current of the TK5P60W,RVQ?

The continuous drain current is 5.4A.

What is the maximum Rds On for this Toshiba MOSFET?

The maximum Rds On is 900mOhm at 2.7A, 10V.

What is the operating temperature range for the TK5P60W,RVQ?

The operating temperature range is -55°C to +150°C.

What package type is the TK5P60W,RVQ MOSFET supplied in?

It is supplied in a DPAK - 3 package.

What is the RoHS status of the TK5P60W,RVQ?

The RoHS status is RoHS3 Compliant.

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