| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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226,000 pcs
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226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
60,000 pcs
|
60000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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This Toshiba TK5P60W,RVQ(S is an N-channel MOSFET belonging to the TK series. It is designed for enhancement mode operation and comes in a 3-pin TO-252 surface mount package.
Key electrical specifications include a maximum continuous drain current (Id) of 5.4A and a maximum drain-source voltage (Vds) of 600V. The maximum drain-source on-resistance (Rds) is 900mΩ. It also has a typical gate charge (Qg) of 10.5nC at Vgs and a maximum power dissipation (Pd) of 60W.
The MOSFET operates at a maximum temperature of 150°C. Its mechanical dimensions are a length of 6.6mm and a height of 2.3mm. The component is manufactured in China.
This device is suitable for various power switching applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The maximum continuous drain current is 5.4A.
The maximum drain-source on-resistance is 900mΩ.
The maximum power dissipation is 60W.
The maximum operating temperature is 150°C.
The MOSFET is supplied in a TO-252 package.