Mfr Part #:

TK5P60V

Mfr Name: Toshiba

The Toshiba TK5P60V is an N-Channel MOSFET designed for power management applications. It features a 500V drain-source breakdown voltage and a continuous drain current of 5A.

✓ Total Stock: 3,500 pcs

TK5P60V Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	3,500 pcs On Request	3500 pcs	On Request	1	On Request	On Request	14+	On Request	On Request

TK5P60V Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Mounting Type	SMD/SMT
Number of Channels	1
Technology	Si
Transistor Type	N-Channel

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TK5P60V Description

Short technical summary and product information.

The TK5P60V from Toshiba is an N-Channel MOSFET suitable for various power electronics applications. This component is housed in a TO-252 package, designed for surface-mount technology (SMT).

Key electrical characteristics include a drain-source breakdown voltage of 500V and a continuous drain current of 5A. The on-resistance (Rds On) is specified at 1.3 Ohms, and it operates with a gate-source voltage (Vgs) of up to 30V. The device offers a power dissipation of 80W and operates within a temperature range of -55°C to +150°C.

With a gate charge (Qg) of 11 nC and specified rise and fall times, the TK5P60V is engineered for efficient switching. Its N-Channel enhancement mode operation makes it a versatile choice for power supply circuits, motor control, and other power management systems requiring reliable performance and compact packaging.

TK5P60V Quick Information

Product Type: N-Channel MOSFET

Series: TK5P60V

Canonical Name: Toshiba TK5P60V N-Channel MOSFET

Subcategory: N-Channel

TK5P60V Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TK5P60V Features

500V drain-source breakdown voltage.
5A continuous drain current.
1.3 Ohms Rds On resistance.
TO-252 surface-mount package.
Operates from -55°C to +150°C.

TK5P60V Applications

Used in power supply circuits.
Suitable for motor control applications.
Ideal for power management systems.
Applicable in switching power supplies.

TK5P60V FAQs

5 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the TK5P60V?

The drain-source breakdown voltage is 500 V.

What is the continuous drain current for the TK5P60V?

The continuous drain current is 5 A.

What is the Rds On resistance of the TK5P60V?

The Rds On drain source resistance is 1.3 Ohms.

What is the package type for the TK5P60V?

The package type is TO-252.

What is the operating temperature range for the TK5P60V?

The operating temperature range is -55°C to +150°C.

TK5P60V Alternate Parts

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BSC079N03LSG

Infineon Technologies

The Infineon Technologies BSC079N03LSG is an N-Channel MOSFET with a 30V drain-source breakdown voltage and 14A continuous drain current. It is supplied in a DFN-85X6 package.

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