| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Toshiba, part number TK5P53D(T6RSS-Q), is engineered for robust performance in demanding applications. It features a high drain-to-source voltage rating of 525V and can handle a continuous drain current of up to 5A under specific conditions.
The device exhibits a maximum on-resistance of 1.5 Ohms at 2.5A and 10V gate drive, with a maximum gate charge of 11nC. Its power dissipation capability is rated at 80W (Tc), making it suitable for power switching applications. The operating temperature range extends up to 150°C (TJ).
Packaged in a surface-mount TO-252-3, DPak (2 Leads + Tab), SC-63 (D-Pak) format, this MOSFET is designed for efficient thermal management and ease of integration into PCB layouts. The gate-to-source voltage maximum is ±30V, and the gate threshold voltage is 4.4V at 1mA.
Key electrical characteristics include an input capacitance of 540pF at 25V. The technology employed is MOSFET (Metal Oxide), providing reliable switching performance. This component is suitable for various power electronics designs requiring high voltage handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 525 V.
The continuous drain current is 5A (Ta).
The maximum power dissipation is 80W (Tc).
The maximum on-resistance is 1.5 Ohm at 2.5A drain current and 10V gate voltage.
The operating temperature is up to 150°C (TJ).
It is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, it is RoHS3 Compliant.