| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
141 pcs
|
141 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Toshiba, part number TK5A60W,S4VX, is designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 5.4A at 25°C. The on-resistance (Rds On) is specified at a maximum of 900mOhm at 2.7A and 10V gate drive voltage.
The device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 30W (Tc). Key electrical characteristics include a gate charge (Qg) of 10.5 nC and an input capacitance (Ciss) of 380 pF. The gate threshold voltage (Vgs(th)) is 3.7V at 270µA, and the maximum gate-source voltage (Vgs) is ±30V.
The TK5A60W,S4VX is mounted via a through-hole method and comes in a TO-220SIS package. It utilizes MOSFET (Metal Oxide) technology. Compliance information indicates RoHS3 compliance and Moisture Sensitivity Level 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600 V.
The continuous drain current (Id) is 5.4A.
The package type is TO-220SIS.
The operating temperature range is 150°C (TJ).
The maximum Rds On is 900mOhm at 2.7A, 10V.
Yes, it is RoHS3 compliant.