| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The Toshiba TK5A53D is a general-purpose N-Channel POWER MOSFET suitable for switching applications. It offers a minimum breakdown voltage of 525V and a maximum continuous drain current of 5A. The device has a low maximum drain-source on-resistance of 1.5 ohm.
This MOSFET utilizes METAL-OXIDE SEMICONDUCTOR FET technology and operates in enhancement mode. It includes a built-in diode (DS) and is configured as a single element.
The TK5A53D comes in a rectangular PLASTIC/EPOXY package with a flange mount style, utilizing through-hole termination. The package code is SC-67. Its avalanche energy rating is 158 mJ.
The minimum breakdown voltage of the TK5A53D MOSFET is 525 V.
The maximum continuous drain current (ID) for the TK5A53D is 5 A.
The maximum drain-source on-resistance of the TK5A53D is 1.5 ohm.
The TK5A53D MOSFET has an N-CHANNEL type.
The TK5A53D is supplied in an SC-67 package with a flange mount style.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.