Mfr Part #:

TK56E12N1

Mfr Name: Toshiba

The Toshiba TK56E12N1 is an N-channel MOSFET with a drain-source voltage of 120V and a continuous drain current of 112A. It is supplied in a TO-220AB package.

✓ Total Stock: 29,104 pcs

TK56E12N1 Available from 2 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	28,999 pcs On Request	28999 pcs	On Request	1	On Request	On Request	14+12+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	105 pcs On Request	105 pcs	On Request	1	On Request	On Request	13+	On Request	On Request

TK56E12N1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Gate Charge	69nC
Mounting Type	THT
Power Dissipation	168W
SVHC Present	Not Present
Storage Temperature	-55 to 150°C

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TK56E12N1 Description

Short technical summary and product information.

The Toshiba TK56E12N1 is an N-channel Silicon MOSFET designed for switching voltage regulator applications. It features a low drain-source on-resistance of 5.8 mΩ (typ.) at VGS = 10 V and a low leakage current of 10 µA (max) at VDS = 120 V.

This MOSFET has a drain-source voltage rating of 120V and a continuous drain current of 112A, with a pulsed drain current of 56A. The power dissipation is rated at 168W (Tc = 25°C). It operates with a gate-source voltage range of ±20V and has a threshold voltage between 2.0 to 4.0V.

The device is housed in a TO-220 package, suitable for through-hole mounting. It has a channel temperature limit of 150°C and a storage temperature range of -55 to 150°C. Thermal resistance from channel to case is 0.74°C/W, and from channel to ambient is 83.3°C/W.

Key electrical characteristics include a typical on-resistance of 5.8 mΩ and a maximum leakage current of 10 µA. The device is enhancement mode and has a gate charge of 69nC.

TK56E12N1 Quick Information

Product Type: N-Channel MOSFET

Canonical Name: Toshiba TK56E12N1 N-Channel MOSFET

Subcategory: N-Channel

TK56E12N1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TK56E12N1 Features

N-channel MOSFET for switching regulators.
120V drain-source voltage rating.
112A continuous drain current.
Low 5.8mΩ typical on-resistance.
TO-220AB through-hole package.

TK56E12N1 Applications

Suitable for switching voltage regulators.
Power supply circuit applications.
General purpose power switching.

TK56E12N1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage of the TK56E12N1?

The drain-source voltage of the TK56E12N1 is 120V.

What is the continuous drain current for the TK56E12N1?

The continuous drain current (DC) for the TK56E12N1 is 112A.

What is the power dissipation of the TK56E12N1?

The power dissipation of the TK56E12N1 is 168W at a case temperature of 25°C.

What is the typical on-resistance of the TK56E12N1?

The typical on-resistance of the TK56E12N1 is 5.8mΩ when the gate-source voltage is 10V.

What package type is the TK56E12N1 supplied in?

The TK56E12N1 is supplied in a TO-220AB package.

What is the RoHS status of the TK56E12N1?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TK56E12N1?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.