| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
735 pcs
|
735 pcs | On Request | 1 | On Request | On Request | 1216+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK55D10J1(Q) is a Silicon N-Channel MOS Type Field Effect Transistor, part of the Ultra-High-Speed U-MOS III series. It is engineered for switching regulator applications and high-speed switching tasks.
Key electrical characteristics include a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 55A at 25°C case temperature. The device exhibits a low drain-source ON resistance (Rds(on)) of up to 10.5mOhm at 27A and 10V gate-source voltage, and a typical value of 9mOhm at 4.5V gate-source voltage. Its gate charge (Qg) is typically 110nC at 10V Vgs, and the gate threshold voltage (Vth) ranges from 1.1V to 2.3V at 1mA Id.
With a maximum power dissipation of 140W at 25°C case temperature, this MOSFET is suitable for demanding power applications. The operating temperature range is up to 150°C (TJ). The device is housed in a TO-220-3 package, designed for through-hole mounting.
This MOSFET is an electrostatic-sensitive device and requires careful handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The device is available in a TO-220-3 (TO-220(W)) through-hole package.
The maximum operating junction temperature is 150°C.
The maximum drain-source on-resistance is 10.5 mOhm at VGS=10V (ID=27A), with a typical value of 9 mOhm at VGS=4.5V.
The gate threshold voltage ranges from 1.1V to 2.3V at ID=1mA and VDS=10V.
The maximum gate charge is 110 nC at VGS=10V.
The maximum input capacitance is 5700 pF at VDS=10V.