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TK55D10J1 The Toshiba TK55D10J1 is an N-Channel MOSFET designed for power applications. It features a 100V drain-source voltage and a continuous drain current of 55A.
Mfr Part #:

TK55D10J1

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK55D10J1 is an N-Channel MOSFET designed for power applications. It features a 100V drain-source voltage and a continuous drain current of 55A.
✓ Total Stock: 42,500 pcs

TK55D10J1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
42,500 pcs
On Request
42500 pcs On Request 1 On Request On Request 10+12+ On Request On Request
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TK55D10J1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Mounting Type
Package / Case
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Vgs(th) (Max) @ Id
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TK55D10J1 Description

Short technical summary and product information.

The Toshiba TK55D10J1 is a high-performance N-Channel MOSFET belonging to the discrete semiconductor product family. It is designed for applications requiring robust power handling capabilities.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 55A at 25°C. The on-resistance (Rds On) is specified as a maximum of 10.5 mOhm at 27A and 10V gate-source voltage. The device also features a typical gate charge (Qg) of 110nC at 10V and an input capacitance (Ciss) of 5700pF at 10V.

 

The MOSFET has a maximum power dissipation of 140W and a gate threshold voltage (Vgs(th)) of 2.3V maximum at 1mA.

 

Packaged in a TO-220-3 configuration with through-hole mounting, the TK55D10J1 is supplied in a tube. This component is suitable for various industrial automation and process automation applications where reliable switching and power control are essential.

TK55D10J1 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: Toshiba TK55D10J1 N-Channel MOSFET
Subcategory: N-Channel

TK55D10J1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK55D10J1 Features

  • 100V drain-to-source voltage rating.
  • 55A continuous drain current capability.
  • Low 10.5 mOhm maximum on-resistance.
  • Through-hole mounting TO-220-3 package.
  • 140W maximum power dissipation.

TK55D10J1 Applications

  • Suitable for power switching circuits.
  • Used in industrial automation systems.
  • Applicable to process automation equipment.
  • Ideal for power management designs.

TK55D10J1 FAQs

9 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the TK55D10J1?

The drain-to-source voltage (Vdss) is 100V.

What is the continuous drain current of the TK55D10J1 at 25°C?

The continuous drain current (Id) at 25°C is 55A.

What is the maximum on-resistance for the TK55D10J1?

The maximum on-resistance (Rds On) is 10.5 mOhm at 27A and 10V.

What is the gate charge of the TK55D10J1?

The typical gate charge (Qg) is 110nC at 10V.

What is the input capacitance of the TK55D10J1?

The typical input capacitance (Ciss) is 5700pF at 10V.

What is the gate threshold voltage for the TK55D10J1?

The maximum gate threshold voltage (Vgs(th)) is 2.3V at 1mA.

What is the maximum power dissipation for the TK55D10J1?

The maximum power dissipation is 140W.

What package type is the TK55D10J1 in?

The TK55D10J1 is in a TO-220-3 package.

How is the TK55D10J1 mounted?

The TK55D10J1 is mounted using the through-hole method.

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