| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology |
This Toshiba TK50E06K3A,S1X(S is an N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 50A at a case temperature.
The MOSFET exhibits a low on-resistance (Rds On) of 8.5mOhm at 25A and 10V gate-source voltage, making it suitable for efficient power switching. The gate charge (Qg) is 54 nC at 10V.
Packaged in a standard TO-220-3 through-hole configuration, this component is designed for easy integration into circuit boards. The technology used is MOSFET (Metal Oxide).
This part is part of Toshiba's U-MOSIV series, known for its performance in power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the TK50E06K3A,S1X(S MOSFET is 60V.
The continuous drain current rating is 50A.
The maximum on-resistance (Rds On) is 8.5mOhm at 25A drain current and 10V gate-source voltage.
The gate charge (Qg) is 54 nC at 10V gate-source voltage.
The TK50E06K3A,S1X(S is an N-Channel MOSFET.
The MOSFET is supplied in a TO-220-3 package.
The TK50E06K3A,S1X(S MOSFET is mounted using the through-hole method.