| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
75,000 pcs
|
75000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TK4R3E06PL,S1X is a high-performance N-Channel MOSFET designed for power management applications. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 80A at 25°C (Tc).
The MOSFET exhibits a low maximum on-resistance (Rds On) of 7.2mOhm at 15A and 4.5V gate-source voltage (Vgs). Key electrical parameters include a gate charge (Qg) of 48.2 nC (max) at 10V Vgs and an input capacitance (Ciss) of 3280 pF (max) at 30V Vds. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 500µA.
With a maximum power dissipation of 87W (Tc) and an operating temperature range of up to 175°C (TJ), this device is suitable for demanding thermal environments. It is mounted via a through-hole configuration and comes in a standard TO-220-3 package.
The TK4R3E06PL,S1X is RoHS3 compliant, indicating adherence to environmental regulations regarding hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
80A at 25°C case temperature.
7.2mOhm maximum at 15A drain current and 4.5V gate-source voltage.
48.2nC maximum at 10V gate-source voltage.
3280pF maximum at 30V drain-source voltage.
2.5V maximum at 500µA drain current.
175°C.
TO-220-3 through-hole package.