TK4P60DB(T6RSS-Q) The Toshiba TK4P60DB(T6RSS-Q) is an N-channel MOSFET designed for power applications. It features a 600V drain-source voltage and a 3.7A continuous drain current.
Mfr Part #:

TK4P60DB(T6RSS-Q)

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK4P60DB(T6RSS-Q) is an N-channel MOSFET designed for power applications. It features a 600V drain-source voltage and a 3.7A continuous drain current.
✓ Total Stock: 30 pcs
$ Price Range: $2.56

TK4P60DB(T6RSS-Q) Available from 1 distributor

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✓ Non-Authorised
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TK4P60DB(T6RSS-Q) Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TK4P60DB(T6RSS-Q) Description

Short technical summary and product information.

The Toshiba TK4P60DB(T6RSS-Q) is an N-channel power MOSFET with a drain-source voltage rating of 600V. It offers a continuous drain current of 3.7A at 25°C and a maximum on-resistance of 2 Ohms at 1.9A and 10V gate drive.

 

This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a TO-252-3, D-Pak (2 Leads + Tab), SC-63 package, suitable for surface mounting. It has a maximum power dissipation of 80W (Tc) and an operating temperature range of -55°C to 150°C (TJ).

 

Key electrical parameters include a gate threshold voltage of 4.4V (max) at 1mA, a gate charge of 11nC (max) at 10V, and an input capacitance of 540pF (max) at 25V. The maximum gate-source voltage is ±30V, and it operates with a drive voltage of 10V.

 

This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited. It is suitable for various power switching and control applications where high voltage and moderate current handling are required.

TK4P60DB(T6RSS-Q) Quick Information

Product Type: N-Channel MOSFET
Canonical Name: Toshiba TK4P60DB(T6RSS-Q) N-Channel MOSFET
Subcategory: N-Channel

TK4P60DB(T6RSS-Q) Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK4P60DB(T6RSS-Q) Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK4P60DB(T6RSS-Q) Features

  • 600V drain-source voltage rating.
  • 3.7A continuous drain current.
  • 2 Ohm maximum on-resistance.
  • Surface mount D-Pak package.
  • RoHS3 compliant.

TK4P60DB(T6RSS-Q) Applications

  • Used in power supply switching circuits.
  • Suitable for motor control applications.
  • Ideal for DC-DC converters.
  • Common in LED lighting drivers.

TK4P60DB(T6RSS-Q) FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the TK4P60DB(T6RSS-Q)?

The drain-source voltage (Vdss) is 600V.

What is the continuous drain current for the TK4P60DB(T6RSS-Q)?

The continuous drain current is 3.7A at 25°C.

What is the maximum on-resistance of this MOSFET?

The maximum Rds On is 2 Ohms at 1.9A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the TK4P60DB(T6RSS-Q) supplied in?

It is supplied in a TO-252-3, D-Pak (2 Leads + Tab), SC-63 package suitable for surface mounting.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 compliant.

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