| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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75 pcs
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75 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK4P60DA(T6RSS-Q) is a silicon N-Channel MOSFET designed for applications such as switching voltage regulators. It features a maximum drain-source voltage of 600V and a continuous drain current of 3.5A at 25°C.
Key electrical characteristics include a low drain-source on-resistance of 1.7 Ω (typ.) at 10V VGS and a gate threshold voltage ranging from 2.4V to 4.4V. The device also exhibits a high forward transfer admittance of 2.2 S (typ.) and a low leakage current of 10 µA (max) at 600V VDS.
This MOSFET is housed in a DPAK surface mount package, identified as TO-252-3, DPAK (2 Leads + Tab), SC-63. It operates within a channel temperature range of -55°C to 150°C, with a maximum power dissipation of 80W (Tc).
The device has a start of commercial production in December 2009. It is sensitive to electrostatic discharge and should be handled with care.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The maximum DC drain current is 3.5A, and pulsed drain current is 14A.
The typical on-resistance is 1.7Ω at VGS=10V, with a maximum of 2.2Ω at 1.8A and VGS=10V.
The maximum gate charge is 11nC at VGS=10V.
The maximum channel temperature is 150°C, and the storage temperature range is -55°C to 150°C.
The device is available in a TO-252-3 (DPAK) surface-mount package, also designated as D-Pak.
Yes, it has a single-pulse avalanche energy rating of 132mJ and repetitive avalanche energy of 8mJ.