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TK4P60D,RQ The Toshiba TK4P60D,RQ is an N-Channel MOSFET designed for surface mount applications. It offers a 600V drain-source voltage and a continuous drain current of 4A.
Mfr Part #:

TK4P60D,RQ

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK4P60D,RQ is an N-Channel MOSFET designed for surface mount applications. It offers a 600V drain-source voltage and a continuous drain current of 4A.
✓ Total Stock: 4,200 pcs
$ Price Range: $2.56

TK4P60D,RQ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
4,200 pcs
On Request
4200 pcs On Request 1 On Request On Request 1433+1429+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TK4P60D,RQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TK4P60D,RQ Description

Short technical summary and product information.

The Toshiba TK4P60D,RQ is a power MOSFET transistor featuring an N-Channel configuration. It is designed for surface mount applications and comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 4A at ambient temperature. The on-resistance (Rds On) is a maximum of 1.7 Ohms at 2A and 10V gate-source voltage. The gate charge (Qg) is a maximum of 12 nC at 10V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 4.4V maximum at 1mA. Input capacitance (Ciss) is 600 pF maximum at 25V Vds.

 

This MOSFET operates at temperatures up to 150°C and has a maximum power dissipation of 100W (Tc). The drive voltage is 10V. It is classified under the MOSFET (Metal Oxide) technology.

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. The mounting type is Surface Mount.

TK4P60D,RQ Quick Information

Product Type: MOSFET Transistor
Canonical Name: Toshiba TK4P60D,RQ N-Channel MOSFET
Subcategory: Single

TK4P60D,RQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK4P60D,RQ Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK4P60D,RQ Features

  • N-Channel MOSFET technology.
  • 600V drain-to-source voltage.
  • 4A continuous drain current.
  • 1.7 Ohm maximum on-resistance.
  • Surface mount DPAK package.

TK4P60D,RQ Applications

  • Power supply switching circuits.
  • DC-DC converter applications.
  • Motor control drives.
  • LED lighting systems.
  • Battery management systems.

TK4P60D,RQ FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the TK4P60D,RQ?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current of the TK4P60D,RQ?

The continuous drain current (Id) is 4A at ambient temperature.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 1.7 Ohms at 2A and 10V.

What is the operating temperature range for the TK4P60D,RQ?

The operating temperature is up to 150°C.

What package type is the TK4P60D,RQ MOSFET in?

It is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the TK4P60D,RQ RoHS compliant?

Yes, it is RoHS3 Compliant.

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