TK4P55DA(T6RSS-Q) The Toshiba TK4P55DA(T6RSS-Q) is an N-Channel MOSFET designed for power applications. It features a 550V drain-source voltage and a continuous drain current of 3.5A.
Mfr Part #:

TK4P55DA(T6RSS-Q)

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK4P55DA(T6RSS-Q) is an N-Channel MOSFET designed for power applications. It features a 550V drain-source voltage and a continuous drain current of 3.5A.
✓ Total Stock: 25 pcs
$ Price Range: $2.56

TK4P55DA(T6RSS-Q) Available from 1 distributor

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TK4P55DA(T6RSS-Q) Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TK4P55DA(T6RSS-Q) Description

Short technical summary and product information.

This N-Channel MOSFET from Toshiba, part number TK4P55DA(T6RSS-Q), is suitable for various power switching applications. It offers a high drain-source voltage rating of 550V and can handle a continuous drain current of up to 3.5A at ambient temperature.

 

The device has a low on-resistance of 2.45 Ohms maximum at 1.8A and 10V gate-source voltage, contributing to efficient power transfer. The gate charge is 9 nC maximum at 10V, and the input capacitance is 380 pF maximum at 25V.

 

Designed for surface mounting, the TK4P55DA(T6RSS-Q) comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, also known as D-Pak. It operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 80W when the case temperature is controlled.

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These specifications make it a reliable component for power management circuits.

TK4P55DA(T6RSS-Q) Quick Information

Product Type: MOSFET
Canonical Name: TK4P55DA(T6RSS-Q)
Subcategory: Single

TK4P55DA(T6RSS-Q) Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK4P55DA(T6RSS-Q) Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK4P55DA(T6RSS-Q) Features

  • N-Channel MOSFET with 550V drain-source voltage.
  • Continuous drain current of 3.5A.
  • Low Rds(on) of 2.45 Ohms maximum.
  • Surface mount D-Pak package.
  • RoHS3 compliant.

TK4P55DA(T6RSS-Q) Applications

  • Suitable for power switching circuits.
  • Used in power management applications.
  • Ideal for high voltage designs.
  • Efficient current handling.

TK4P55DA(T6RSS-Q) FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the TK4P55DA(T6RSS-Q)?

The maximum drain-source voltage (Vdss) for the TK4P55DA(T6RSS-Q) is 550 V.

What is the continuous drain current of the TK4P55DA(T6RSS-Q)?

The continuous drain current (Id) for the TK4P55DA(T6RSS-Q) is 3.5A at ambient temperature.

What is the maximum Rds On for this MOSFET?

The maximum Rds On for the TK4P55DA(T6RSS-Q) is 2.45 Ohms when measured at 1.8A drain current and 10V gate-source voltage.

What is the operating temperature range for the TK4P55DA(T6RSS-Q)?

The operating temperature range for the TK4P55DA(T6RSS-Q) is up to 150°C (TJ).

What package type is the TK4P55DA(T6RSS-Q MOSFET in?

The TK4P55DA(T6RSS-Q MOSFET is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.

Is the TK4P55DA(T6RSS-Q RoHS compliant?

Yes, the TK4P55DA(T6RSS-Q) is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) for the TK4P55DA(T6RSS-Q) is 1.

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