| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK4P55D(T6RSS-Q) is a high-performance N-Channel MOSFET. It is rated for a drain-to-source voltage (Vdss) of 550V and can handle a continuous drain current (Id) of 4A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 1.88 Ohms when driven at 2A and 10V gate-source voltage.
With a maximum power dissipation of 80W (Tc), this MOSFET is suitable for various power applications. It operates at temperatures up to 150°C (TJ). The gate charge (Qg) is 11 nC at 10V, and the input capacitance (Ciss) is 490 pF at 25V.
The MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. Its gate threshold voltage (Vgs(th)) is a maximum of 4.4V at 1mA, and it requires a drive voltage of 10V for optimal Rds On performance. The maximum gate-source voltage is ±30V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
550V.
4A at 25°C.
1.88 Ohm at 2A and 10V.
11 nC at 10V.
DPAK (TO-252-3).
150°C.
490 pF at 25V.