| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TK4A60DB(STA4,Q,M) is an N-Channel MOSFET designed for power applications. It offers a high drain-to-source voltage of 600V and can handle a continuous drain current of 3.7A. The MOSFET features a low on-resistance of 2 Ohm at 1.9A and 10V gate-source voltage, with a gate charge of 11nC at 10V.
With a maximum power dissipation of 35W (Tc) and an operating temperature up to 150°C (TJ), this component is suitable for demanding environments. The device utilizes MOSFET (Metal Oxide) technology and is housed in a TO-220-3 Full Pack package, designed for through-hole mounting.
Key electrical characteristics include a gate threshold voltage of 4.4V at 1mA and a maximum gate-to-source voltage of ±30V. The input capacitance is rated at 540pF at 25V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The continuous drain current rating is 3.7A.
The maximum on-resistance (Rds On) is 2 Ohms at 1.9A drain current and 10V gate-source voltage.
The operating temperature range is up to 150°C (TJ).
It is supplied in a TO-220-3 Full Pack package, with the supplier device package being TO-220SIS.
This component is designed for through-hole mounting.